IndiumV3, Main, Repository, bibRecord, 00A718

Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A

Identifieur interne : 00A718 ( Main/Repository ); précédent : 00A717; suivant : 00A719

Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A

Auteurs : RBID : Pascal:04-0108930

Descripteurs français

Pascal (Inist)
- 6837E, 8105E, 6865L, 6855A, 8115H, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Fil quantique semiconducteur, Epitaxie jet moléculaire, Croissance semiconducteur.

English descriptors

KwdEn :
- Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Molecular beam epitaxy, Semiconductor growth, Semiconductor quantum wires, scanning tunnelling microscopy.

Abstract

Generally (In,Ga)As strained growth on GaAs surfaces results in zero-dimensional quantum dots. The formation of one-dimensional quantum wires is demonstrated during (In,Ga)As molecular-beam-epitaxial growth on GaAs(311)A at high temperature. The wires are running along the [-233] direction. Atomically resolved scanning tunneling microscopy images reveal that the wires are triangular-shaped in cross section and the two side bonding facets are {11,5,2}. These results are discussed in terms of a mechanism of strain-driven facet formation. © 2004 American Institute of Physics.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A</title>
<author><name sortKey="Wen, H" uniqKey="Wen H">H. Wen</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Wang, Z M" uniqKey="Wang Z">Z. M. Wang</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Salamo, G J" uniqKey="Salamo G">G. J. Salamo</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">04-0108930</idno>
<date when="2004-03-08">2004-03-08</date>
<idno type="stanalyst">PASCAL 04-0108930 AIP</idno>
<idno type="RBID">Pascal:04-0108930</idno>
<idno type="wicri:Area/Main/Corpus">00BE38</idno>
<idno type="wicri:Area/Main/Repository">00A718</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Molecular beam epitaxy</term>
<term>Semiconductor growth</term>
<term>Semiconductor quantum wires</term>
<term>scanning tunnelling microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>6837E</term>
<term>8105E</term>
<term>6865L</term>
<term>6855A</term>
<term>8115H</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Gallium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Fil quantique semiconducteur</term>
<term>Epitaxie jet moléculaire</term>
<term>Croissance semiconducteur</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Generally (In,Ga)As strained growth on GaAs surfaces results in zero-dimensional quantum dots. The formation of one-dimensional quantum wires is demonstrated during (In,Ga)As molecular-beam-epitaxial growth on GaAs(311)A at high temperature. The wires are running along the [-233] direction. Atomically resolved scanning tunneling microscopy images reveal that the wires are triangular-shaped in cross section and the two side bonding facets are {11,5,2}. These results are discussed in terms of a mechanism of strain-driven facet formation. © 2004 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>84</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>WEN (H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>WANG (Z. M.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SALAMO (G. J.)</s1>
</fA11>
<fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>1756-1758</s1>
</fA20>
<fA21><s1>2004-03-08</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2004 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>04-0108930</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Generally (In,Ga)As strained growth on GaAs surfaces results in zero-dimensional quantum dots. The formation of one-dimensional quantum wires is demonstrated during (In,Ga)As molecular-beam-epitaxial growth on GaAs(311)A at high temperature. The wires are running along the [-233] direction. Atomically resolved scanning tunneling microscopy images reveal that the wires are triangular-shaped in cross section and the two side bonding facets are {11,5,2}. These results are discussed in terms of a mechanism of strain-driven facet formation. © 2004 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60A16C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H65</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>6837E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>6865L</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>6855A</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>8115H</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Fil quantique semiconducteur</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor quantum wires</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Croissance semiconducteur</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor growth</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>scanning tunnelling microscopy</s0>
<s4>INC</s4>
</fC03>
<fN21><s1>068</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0409M000046</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A

Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri